IndiumV3, Main, Repository, bibRecord, 001342

Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique

Identifieur interne : 001342 ( Main/Repository ); précédent : 001341; suivant : 001343

Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique

Auteurs : RBID : Pascal:12-0238055

Descripteurs français

Pascal (Inist)
- Condition opératoire, Couche mince, Dépôt phase vapeur, Modèle thermodynamique, Composition phase, Dépendance température, Iode, Diffraction RX, Microscopie électronique balayage, Résultat expérimental, Modélisation, Etude théorique, Cuivre, Gallium, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, I, 8115K, 6855N, 6855J.
Wicri :
- concept : Iode, Cuivre.

English descriptors

KwdEn :
- Copper, Copper selenides, Experimental result, Gallium, Gallium selenides, Indium selenides, Iodine, Modelling, Operating conditions, Phase composition, Scanning electron microscopy, Temperature dependence, Theoretical study, Thermodynamic model, Thin films, Vapor deposition, XRD.

Abstract

The aim of this work is to predict optimal conditions for growing good quality crystalline thin films using close spaced vapor transport (CSVT) technique. A thermodynamic model was developed and tested for the Cu-Ga-In-Se-I system to describe the deposition of CuGa_0.3In_0.7Se₂ (CIGS). We considered a multiphase mixture containing 48 chemical compounds derived from the combination of the simple elements Cu, Ga, In, Se and I. The minimization of the Gibbs energy of the system was performed to calculate the composition of the mixture at the equilibrium state. In this way, the solid phase composition with possible impurities was predicted for various source temperature (T_s) and iodine pressure (P₁₂). The conditions of stoichiometric and quasi-stoichiometric deposition are from 400 to 600 °C for T_s and from 30 Pa to 14 kPa for P₁₂. These optimal conditions were tested experimentally at 475 °C, 500 °C, 525 °C and 550 °C. The elaborated CIGS thin films were of good quality as revealed by X-ray diffraction and scanning electron microscopy. The experimental results proved that the thermodynamic model is a helpful tool for the prediction of the optimal conditions in the CSVT process. .

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Le document en format XML

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In<sub>0.7</sub>
Se<sub>2</sub>
 thin films using close spaced vapor transport technique</title>
<author><name sortKey="Abounachit, O" uniqKey="Abounachit O">O. Abounachit</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LP2M2E, BP 549 Faculté des Sciences et Techniques, Université Cadi Ayyad</s1>
<s2>Gueliz, Marrakech</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Maroc</country>
<wicri:noRegion>Gueliz, Marrakech</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chehouani, H" uniqKey="Chehouani H">H. Chehouani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>LP2M2E, BP 549 Faculté des Sciences et Techniques, Université Cadi Ayyad</s1>
<s2>Gueliz, Marrakech</s2>
<s3>MAR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<wicri:noRegion>Gueliz, Marrakech</wicri:noRegion>
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</author>
<author><name sortKey="Djessas, K" uniqKey="Djessas K">K. Djessas</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS-PROMES Tecnosud, Rambla de la Thermodynamique</s1>
<s2>66100, Perpignan</s2>
<s3>FRA</s3>
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<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
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<publicationStmt><idno type="inist">12-0238055</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper</term>
<term>Copper selenides</term>
<term>Experimental result</term>
<term>Gallium</term>
<term>Gallium selenides</term>
<term>Indium selenides</term>
<term>Iodine</term>
<term>Modelling</term>
<term>Operating conditions</term>
<term>Phase composition</term>
<term>Scanning electron microscopy</term>
<term>Temperature dependence</term>
<term>Theoretical study</term>
<term>Thermodynamic model</term>
<term>Thin films</term>
<term>Vapor deposition</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Condition opératoire</term>
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<term>Modèle thermodynamique</term>
<term>Composition phase</term>
<term>Dépendance température</term>
<term>Iode</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
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<term>Etude théorique</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>I</term>
<term>8115K</term>
<term>6855N</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">The aim of this work is to predict optimal conditions for growing good quality crystalline thin films using close spaced vapor transport (CSVT) technique. A thermodynamic model was developed and tested for the Cu-Ga-In-Se-I system to describe the deposition of CuGa<sub>0.3</sub>
In<sub>0.7</sub>
Se<sub>2</sub>
 (CIGS). We considered a multiphase mixture containing 48 chemical compounds derived from the combination of the simple elements Cu, Ga, In, Se and I. The minimization of the Gibbs energy of the system was performed to calculate the composition of the mixture at the equilibrium state. In this way, the solid phase composition with possible impurities was predicted for various source temperature (T<sub>s</sub>
) and iodine pressure (P<sub>12</sub>
). The conditions of stoichiometric and quasi-stoichiometric deposition are from 400 to 600 °C for T<sub>s</sub>
 and from 30 Pa to 14 kPa for P<sub>12</sub>
. These optimal conditions were tested experimentally at 475 °C, 500 °C, 525 °C and 550 °C. The elaborated CIGS thin films were of good quality as revealed by X-ray diffraction and scanning electron microscopy. The experimental results proved that the thermodynamic model is a helpful tool for the prediction of the optimal conditions in the CSVT process. .</div>
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Se<sub>2</sub>
 thin films using close spaced vapor transport technique</s1>
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In<sub>0.7</sub>
Se<sub>2</sub>
 (CIGS). We considered a multiphase mixture containing 48 chemical compounds derived from the combination of the simple elements Cu, Ga, In, Se and I. The minimization of the Gibbs energy of the system was performed to calculate the composition of the mixture at the equilibrium state. In this way, the solid phase composition with possible impurities was predicted for various source temperature (T<sub>s</sub>
) and iodine pressure (P<sub>12</sub>
). The conditions of stoichiometric and quasi-stoichiometric deposition are from 400 to 600 °C for T<sub>s</sub>
 and from 30 Pa to 14 kPa for P<sub>12</sub>
. These optimal conditions were tested experimentally at 475 °C, 500 °C, 525 °C and 550 °C. The elaborated CIGS thin films were of good quality as revealed by X-ray diffraction and scanning electron microscopy. The experimental results proved that the thermodynamic model is a helpful tool for the prediction of the optimal conditions in the CSVT process. .</s0>
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Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique

Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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